Electron Backscatter Diffraction (EBSD)
EBSD pattern from Silicon-Germanium alloy used to improve transistor performance in integrated circuits.
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. Zhang and Y. Segawa (2004). "Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate." Applied Surface Science 224: 95-98.